Facilities

University Of Leeds

The Leeds THz Photonics Laboratory is one of the largest, best-equipped university THz research facilities in Europe/Asia including five pumped Ti:Sapphire systems (and an OPO); a Bruker 66V-FTIR; cryostats with optical access and purged THz time-domain spectroscopy systems, including unique ultra-broad bandwidth capability. Research is supported by a Molecular Beam Epitaxy (MBE) system dedicated to the growth of GaAs/AlGaAs/InGaAs microwave and terahertz components, and in particular QCLs, and an extensive clean room which will be expanded further in 2011, with the provision of a new £3m electron-beam lithography system funded in part by an EPSRC Physical Sciences Critical Mass grant. Accompanying this experimental infrastructure is extensive theoretical support.

London Centre for Nanotechnology

The London Centre for Nanotechnology is a joint enterprise between UCL and Imperial College London. Acting as a bridge between the biomedical, physical, chemical and engineering sciences, the Centre crosses the 'chip-to-cell interface'. The class 100/1000 cleanrooms, with extensive deposition and optical lithography capabilities, a Raith e-beam lithography system, a Zeiss/Leo dual (electron/ion) beam fabrication/characterisation tool, and scanning probe and electron microscopy systems will be especially valuable for the fabrication tasks required in the proposed project.

Cambridge University

The Cavendish Laboratory, Semiconductor Physics Group facilities include two III-V MBE growth systems that have successfully grown THz QCLs. A 150 m2 III-V semiconductor processing clean room (class 100/1000) includes a state-of-the-art Leica electron beam lithography suite, two reactive ion etching systems, and an array of metal and insulator deposition systems. THz QCL characterisation facilities include a Bruker FTIR spectrometer with associated cryostat and QMC silicon bolometer, and cryostats for use with thermopile, Schottky diode or Golay detectors.

University College London

The UCL Department of Electronic and Electrical Engineering facilities include a newly commissioned £3m MBE system for telecommunications wavelength device growth on GaAs, InP and Si substrates, bit error rate testing to > 40 Gbit/s, network analysis in coaxial formats to 110GHz, spectrum analysis to > 110 GHz, precision power measurement to > 10 THz, heterodyne characterisation to 2 THz, as well as fs laser-based THz near field imaging and spectroscopy.